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Zillow Trulia Rps Exterior Vray Download for Interior 3D Rendering Best of 2D renders 3D renders Interior. Interior Vray 3D Rendering The Road to excellence- Building high-quality interior Vray renders.

Category: RTF (rendering) File Types

Category: EXR File Typesa. Field of the Invention
The instant invention relates to a method for fabricating a dual-phase polycrystalline silicon substrate and, more particularly, to a method for fabricating a polycrystalline silicon substrate having good uniformity and high conductivity.
b. Description of the Related Art
A dual-phase polycrystalline silicon (poly-Si) substrate is a poly-Si substrate in which a first silicon crystal phase having good conductivity and a second silicon crystal phase having poor conductivity are selectively formed on a substrate, and is used as a substrate for a non-volatile semiconductor memory, a solar cell, or the like.
A poly-Si is a material used in fabrication of a device such as a thin film transistor, a memory, or the like. A poly-Si is generally made from a single-crystalline silicon by slicing a single-crystalline silicon ingot into a wafer or a substrate of a desired size. However, a single-crystalline silicon wafer is expensive, and thus not suitable for mass production. Accordingly, a method for fabricating a poly-Si at low cost has been developed, in which a single-crystalline silicon wafer is first made and then a poly-Si having the same or different composition as that of the wafer is formed on a high-quality substrate such as a quartz substrate, a glass substrate, or the like.
However, a quartz substrate or glass substrate is typically a high-priced substrate and thus costly, and is usually not suitable for mass production. Accordingly, an inexpensive substrate such as a poly-Si substrate is generally used. A poly-Si substrate typically has a highly-oriented poly-Si layer having a smooth and flat surface and uniform thickness, and thus requires a low-priced substrate such as a poly-Si substrate. Accordingly, various attempts have been made to fabricate a poly-Si substrate.
One attempt is to use a poly-Si film formed by electrochemical crystallization. Electrochemical crystallization is typically a method of fabricating a poly-Si having a conductivity of 10−4 S/cm
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